050-7480 rev b 8-2004 APT40GP90B2DF2 typical performance curves the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? ssoa rated ? low gate charge ? ultrafast tail current shutoff maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 900 3 4.5 6 3.2 3.9 2.7 500 1500 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 500a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 40a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 40a, t j = 125c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = v ces , v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol bv ces v ge(th) v ce(on) i ces i ges unit volts a na symbol v ces v ge v gem i c1 i c2 i cm ssoa p d t j ,t stg t l APT40GP90B2DF2 900 20 30 100 50 160 160a @ 900v 543 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current 7 @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 150c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. power mos 7 ? igbt g c e t-max tm g c e APT40GP90B2DF2 900v
050-7480 rev b 8-2004 APT40GP90B2DF2 dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 450v i c = 40a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 900v inductive switching (25c) v cc = 600v v ge = 15v i c = 40a r g = 5 ? t j = +25c inductive switching (125c) v cc = 600v v ge = 15v i c = 40a r g = 5 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 6 min typ max 3300 325 35 7.5 145 22 55 160 16 27 75 60 tbd 1415 825 16 27 110 105 tbd 2370 1505 unit pf v nc a ns j ns j unit c/w gm min typ max .23 .61 6.10 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) 7 continuous current limited by package lead temperature. apt reserves the right to change, without notice, the specifications and information contained herein.
050-7480 rev b 8-2004 APT40GP90B2DF2 typical performance curves v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) t j = 25c. 250s pulse test <0.5 % duty cycle v ce = 720v v ce = 450v v ce = 180v v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 25c t j = -55c t j = 125c 250s pulse test <0.5 % duty cycle t c = -50c t c = 125c v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t c = 25c t c = 125c t c = -50c t c = 25c package limited 160 140 120 100 80 60 40 20 0 200 180 160 140 120 100 80 60 40 20 0 5 4 3 2 1 0 1.10 1.05 1.00 0.95 0.90 i c = 40a t j = 25c i c = 80a i c = 20a i c = 40a i c = 20a i c = 40a i c = 80a 0123 456 0123456 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 6 8 10 12 14 16 -55 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 160 140 120 100 80 60 40 20 0 16 14 12 10 8 6 4 2 0 5 4 3 2 1 0 140 120 100 80 60 40 20 0
050-7480 rev b 8-2004 APT40GP90B2DF2 v ge =15v,t j =125c v ge =15v,t j =25c t j = 125c,v ge = 15v t j = 25c,v ge = 15v v ce = 600v r g = 5 ? l = 100 h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) v ce = 600v v ge = +15v t j = 125c r g = 5 ? , l = 100 h, v ce = 600v r g = 5 ? , l = 100 h, v ce = 600v v ce = 600v t j = 25c , t j =125c r g = 5 ? l = 100 h v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v t j = 25 or 125c,v ge = 15v v ce = 600v v ge = +15v r g = 5 ? v ce = 600v v ge = +15v r g = 5 ? v ce = 600v v ge = +15v r g = 5 ? 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 0 25 50 75 100 125 i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature 120 100 80 60 40 20 0 140 120 100 80 60 40 20 0 3500 3000 2500 2000 1500 1000 500 0 6000 5000 4000 3000 2000 1000 0 e on2, 80a e off, 80a e on2, 40a e off, 40a e on2, 20a e off, 20a 25 20 15 10 5 0 70 60 50 40 30 20 10 0 6000 5000 4000 3000 2000 1000 0 8000 7000 6000 5000 4000 3000 2000 1000 0 e on2, 80a e off, 40a e on2, 40a e off, 80a e on2, 20a e off, 20a
050-7480 rev b 8-2004 APT40GP90B2DF2 typical performance curves 0.25 0.20 0.15 0.10 0.05 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.3 0.9 0.7 0.1 0.05 0.5 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 7,000 1,000 500 100 50 10 180 160 140 120 100 80 60 40 20 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area 0 10 20 30 40 50 0 200 400 600 800 1000 c ies c oes c res figure 19b, transient thermal impedance model max max1 max 2 max1 d (on ) r d(off ) f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = 10 20 30 40 50 60 70 80 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 600v r g = 5 ? 300 100 50 5 0.0896 0.140 0.0108f 0.228f rc model case temperature( c) junction temp ( c) power (watts)
050-7480 rev b 8-2004 APT40GP90B2DF2 figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions t j = 125c drainvoltage drain current gate voltage 0 90% t d(off) 10% t f 90% switching energy t j = 125c drain current drainvoltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit i c a d.u.t. apt30df100 v ce figure 21, inductive switching test circuit v cc
050-7480 rev b 8-2004 APT40GP90B2DF2 typical performance curves characteristic / test conditions maximum average forward current (t c = 82c, duty cycle = 0.5) rms forward current (square wave, 50% duty) non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 40a forward voltage i f = 80a i f = 40a, t j = 125c static electrical characteristics unit amps unit volts min typ max 3.5 4.4 2.5 APT40GP90B2DF2 30 40 210 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise specified. ultrafast soft recovery anti-parallel diode min typ max - 40 - 260 - 325 -4- - 315 - 1450 -9- - 125 - 2160 -28 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 30a, di f /dt = -200a/ s v r = 667v, t c = 25 c i f = 30a, di f /dt = -200a/ s v r = 667v, t c = 125 c i f = 30a, di f /dt = -1000a/ s v r = 667v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.5 single pulse 0.1 0.3 0.7 0.9 0.05 figure 1b, transient thermal impedance model 0.0544 c/w 0.129 c/w 0.426 c/w 0.000276 j/ c 0.0165 j/ c 0.379 j/ c power (watts) junction temp ( c) rc model case temperature ( c)
050-7480 rev b 8-2004 APT40GP90B2DF2 t j = 125 c v r = 667v 15a 30a 60a q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = -55 c t j = 25 c t j = 125 c t j = 150 c v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 2. forward current vs. forward voltage figure 3. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery current vs. current rate of change duty cycle = 0.5 t j = 150 c 50 45 40 35 30 25 20 15 10 5 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 8. junction capacitance vs. reverse voltage 60a 30a 15a t j = 125 c v r = 667v 0 1 2 3 4 5 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 100 80 60 40 20 0 3500 3000 2500 2000 1500 1000 500 0 30a 15a 60a t j = 125 c v r = 667v 350 300 250 200 150 100 50 0 35 30 25 20 15 10 5 0 t rr q rr q rr t rr i rrm 0 25 50 75 100 125 150 25 50 75 100 125 150 1 10 100 200 1.2 1.0 0.8 0.6 0.4 0.2 0.0 160 140 120 100 80 60 40 20 0
050-7480 rev b 8-2004 APT40GP90B2DF2 typical performance curves 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) dimensions in millimeters and (inches) 2-plcs. collector (cathode) emitter (anode) gate collector (cathode) t-max ? ( b2 ) package outline apt?s products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign pat ents pending. all rights reserved. 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 33. diode test circuit figure 34, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform apt10035lll
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